? semiconductor components industries, llc, 2009 april, 2009 ? rev. 0 1 publication order number: mbr2h100sf/d MBR2H100SFT3G surface mount schottky power rectifier plastic sod ? 123fl package this device uses the schottky barrier principle with a large area metal ? to ? silicon power diode. ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, pdas and pcmcia cards. typical applications are ac ? dc and dc ? dc converters, reverse battery protection, and ?oring? of multiple supply voltages and any other application where performance and size are critical. features ? guardring for stress protection ? low forward voltage ? 175 c operating junction temperature ? epoxy meets ul 94 v ? 0 ? package designed for optimal automated board assembly ? esd ratings: machine model, c human body model, 3b ? this is a pb ? free device mechanical characteristics ? reel options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape ? device marking: l2h ? polarity designator: cathode band ? weight: 11.7 mg (approximately) ? case: epoxy, molded ? lead finish: 100% matte sn (tin) ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl 1 requirements marking diagram l2h = specific device code m = date code = pb ? free package (note: microdot may be in either location) http://onsemi.com sod ? 123fl case 498 plastic schottky barrier rectifier 2.0 amperes 100 volts device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. MBR2H100SFT3G sod ? 123 (pb ? free) 10000/tape & reel l2hm
MBR2H100SFT3G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (t l = 146 c) i o 2.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 50 a storage and operating junction temperature range (note 1) t stg , t j ? 65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) jcl 23 c/w thermal resistance, junction ? to ? ambient (note 2) r ja 85 c/w thermal resistance, junction ? to ? ambient (note 3) r ja 330 c/w electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 4) (i f = 1.0 a, t j = 25 c) (i f = 2.0 a, t j = 25 c) (i f = 1.0 a, t j = 125 c) (i f = 2.0 a, t j = 125 c) v f 0.76 0.84 0.61 0.68 v maximum instantaneous reverse current (note 4) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 40 0.5 a ma 2. mounted with 700 mm 2 copper pad size (approximately 1 in 2 ) 1 oz fr4 board. 3. mounted with pad size approximately 20 mm 2 copper, 1 oz fr4 board. 4. pulse test: pulse width 380 s, duty cycle 2.0%.
MBR2H100SFT3G http://onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 0.8 0.6 0.4 0 0.2 0.1 1 10 100 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 1 10 100 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) v r , reverse voltage (v) 90 80 60 50 30 20 10 0 0.00001 0.0001 0.001 0.01 0.1 1 10 90 80 60 50 30 20 10 0 i f , forward current (a) i f , forward current (a) i r , reverse current (ma) i r , reverse current (ma) 1.2 1.4 1.0 150 c 125 c 25 c 40 70 100 150 c 125 c 25 c 40 70 100 figure 5. current derating t l , lead temperature ( c) 165 150 145 140 135 0 0.5 1.0 1.5 2.0 i f(av) , average forward current (a) dc square wave 155 170 160 r jl = 23 c/w i o , average forward current (a) 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 p fo , average power dissipation (w) t j = 175 c dc square wave figure 6. forward power dissipation 0.2 0 150 c 125 c 25 c 0.00001 0.0001 0.001 0.01 0.1 1 10 150 c 125 c 25 c 175 1.6 1.4 1.2 2.5 3.0 3.5 4.0 130 125 120 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.8 2 2.2 2.4 2.6 2.8 3
MBR2H100SFT3G http://onsemi.com 4 typical characteristics figure 7. capacitance v r , reverse voltage (v) 80 70 60 50 30 20 10 0 0 20 40 60 80 120 c, capacitance (pf) 40 90 100 100 140 t j = 25 c 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 25% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1.0 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 25% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 8. thermal response, junction ? to ? ambient (20 mm 2 pad) 1.0 1000 figure 9. thermal response, junction ? to ? ambient (1 in 2 pad)
MBR2H100SFT3G http://onsemi.com 5 package dimensions sod ? 123lf case 498 ? 01 issue a *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d e b a a1 l c polarity indicator optional as needed h e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold flash. 4. dimensions d and j are to be measured on flat section of the lead: between 0.10 and 0.25 mm from the lead tip. dim a min nom max min millimeters 0.90 0.95 1.00 0.035 inches a1 0.00 0.05 0.10 0.000 b 0.70 0.90 1.10 0.028 c 0.10 0.15 0.20 0.004 d 1.50 1.65 1.80 0.059 e 2.50 2.70 2.90 0.098 l 0.55 0.75 0.95 0.022 0.037 0.039 0.002 0.004 0.035 0.043 0.006 0.008 0.065 0.071 0.106 0.114 0.030 0.037 nom max 3.40 3.60 3.80 0.134 0.142 0.150 h e ? ? 0 8 0 8 1.22 0.048 mm inches scale 10:1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mbr2h100sf/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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